अमूर्त
Calibration of cryogenic Si diode for temperatures between 30-210 K
S.B.Ota
The variation of forward voltage with temperature of a cryogenic silicon diode of CRYO Industries of America Inc. Model No. DT-470-SD-13 is measured in the temperature range 30-210 K and for current values between 10 nA and 200 ïÂÂA. The characteristic is least squres fitten by a 1st order polynomial and the coefficients are given. The least squares fitting has high temperature root between 420 K and 625 K.
अस्वीकृति: इस सारांश का अनुवाद कृत्रिम बुद्धिमत्ता उपकरणों का उपयोग करके किया गया है और इसे अभी तक समीक्षा या सत्यापित नहीं किया गया है।
